类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 场效应管特性 | 最大rds | 反馈上限-最大值 (Crss) | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | FDS3601 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 1.3A | 1 | -55°C~175°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 鸥翼 | 260 | unknown | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | 2 N-Channel (Dual) | SWITCHING | 480m Ω @ 1.3A, 10V | 4V @ 250μA | 153pF @ 50V | 5nC @ 10V | 100V | 1.3A | 0.53Ohm | 6A | 100V | 26 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
SH8KA7GZETB | ROHM Semiconductor | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 15A Ta | 2 | 150°C TJ | Cut Tape (CT) | 2016 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 鸥翼 | 未说明 | 未说明 | R-PDSO-G8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W Ta | 2 N-Channel (Dual) | SWITCHING | 9.3m Ω @ 15A, 10V | 2.5V @ 1mA | 3320pF @ 15V | 81nC @ 10V | 30V | 0.0093Ohm | 30A | 30V | 65.1 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
![]() | APTMC120AM16CD3AG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | 底座安装 | D-3 Module | 131A Tc | -40°C~150°C TJ | Bulk | 1997 | 活跃 | 1 (Unlimited) | EAR99 | 625W | 2 N-Channel (Half Bridge) | 20m Ω @ 100A, 20V | 2.2V @ 5mA (Typ) | 4750pF @ 1000V | 246nC @ 20V | 20ns | 1200V 1.2kV | 131A | Silicon Carbide (SiC) | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7314PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 39 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 5.3A | 2 | -55°C~150°C TJ | Tube | 1997 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | AVALANCHE RATED, HIGH RELIABILITY | 鸥翼 | 未说明 | 未说明 | IRF7314PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 P-Channel (Dual) | SWITCHING | 58m Ω @ 2.9A, 4.5V | 700mV @ 250μA | 780pF @ 15V | 29nC @ 4.5V | 20V | MS-012AA | 5.3A | 0.058Ohm | 21A | 20V | 150 mJ | METAL-OXIDE SEMICONDUCTOR | 1.4W | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||
![]() | IRF7389PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | -55°C~150°C TJ | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | IRF7389PBF | 2.5W | N and P-Channel | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 650pF @ 25V | 33nC @ 10V | 30V | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7101PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 3.5A | 2 | -55°C~150°C TJ | Tube | 1997 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 鸥翼 | 未说明 | 未说明 | IRF7101PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 1.8A, 10V | 3V @ 250μA | 320pF @ 15V | 15nC @ 10V | 20V | 3.5A | 0.1Ohm | 14A | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
![]() | PMDPB30XNZ | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 6-UDFN Exposed Pad | 4A Ta | -55°C~150°C TJ | 活跃 | 1 (Unlimited) | 6 | 490mW Ta 8.33W Tc | 2 N-Channel (Dual) | 40m Ω @ 3A, 4.5V | 900mV @ 250μA | 660pF @ 10V | 20V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PHKD13N03LT,518 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 23 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | TrenchMOS™ | Obsolete | 2 (1 Year) | 3.57W | 8 | 6 ns | 3.57W | 2 N-Channel (Dual) | 20m Ω @ 8A, 10V | 2V @ 250μA | 752pF @ 15V | 10.7nC @ 5V | 7ns | 11 ns | 10.4A | 20V | 30V | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FMP36-015P | IXYS | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 通孔 | i4-Pac™-5 | 5 | SILICON | 36A 22A | 2 | -55°C~150°C TJ | Tube | 2008 | Polar™ | e1 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AVALANCHE RATED, UL RECOGNIZED | 125W | SINGLE | 未说明 | 未说明 | 5 | 不合格 | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | N and P-Channel | SWITCHING | 40m Ω @ 31A, 10V | 5.5V @ 250μA | 2250pF @ 25V | 70nC @ 10V | 150V | N-CHANNEL AND P-CHANNEL | 22A | 36A | 0.04Ohm | 1000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||
AO6801E | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SC-74, SOT-457 | -55°C~150°C TJ | Digi-Reel® | 2011 | Obsolete | 1 (Unlimited) | 700mW | 700mW | 2 P-Channel (Dual) | 110m Ω @ 2A, 10V | 1.5V @ 250μA | 305pF @ 15V | 12nC @ 10V | 30V | 2A | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CTLDM7120-M832DS TR | Central Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 8-TDFN Exposed Pad | YES | 1A Ta | -65°C~150°C TJ | Cut Tape (CT) | Obsolete | 1 (Unlimited) | EAR99 | compliant | 增强型MOSFET | 1.65W | 2 N-Channel (Dual) | 100m Ω @ 500mA, 4.5V | 1.2V @ 1mA | 220pF @ 10V | 2.4nC @ 4.5V | 20V | 1A | METAL-OXIDE SEMICONDUCTOR | 1.65W | 逻辑电平门 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOC2800 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 4-UFBGA, WLCSP | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | 1.3W | 2 N-Channel (Dual) Common Drain | 9.1nC @ 4.5V | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AON7902 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 8A 13A | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | 1.8W | 增强型MOSFET | 2 N-Channel (Half Bridge) | 21m Ω @ 8A, 10V | 2.3V @ 250μA | 710pF @ 15V | 11nC @ 10V | 30V | 13A | 40A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L11TU(TE85L,F) | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | 6 | 15 ns | 150°C TJ | Cut Tape (CT) | 2014 | Obsolete | 1 (Unlimited) | 500mW | unknown | 2 | Dual | 增强型MOSFET | 16 ns | N and P-Channel | 145m Ω @ 250MA, 4V | 1.1V @ 100μA | 268pF @ 10V | 20V | N-CHANNEL AND P-CHANNEL | 500mA | -1.1V | 0.5A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMWD15UN,518 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 11.6A | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | TrenchMOS™ | Obsolete | 1 (Unlimited) | 4.2W | 2 N-Channel (Dual) | 18.5m Ω @ 5A, 4.5V | 700mV @ 1mA | 1450pF @ 16V | 22.2nC @ 4.5V | 20V | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCL4201(TE85L,F) | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 4-XFLGA | 4 | 150°C TJ | Tape & Reel (TR) | 2009 | Obsolete | 1 (Unlimited) | 500mW | TPC*201 | 2 N-Channel (Half Bridge) | 1.2V @ 200μA | 720pF @ 10V | 85ns | 250 ns | 12V | Standard | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
64-2013PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | SILICON | 1 | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | THROUGH-HOLE | 未说明 | 未说明 | R-PSFM-T3 | 不合格 | SINGLE | 增强型MOSFET | DRAIN | P-CHANNEL | 9A | 0.7Ohm | 36A | 200V | METAL-OXIDE SEMICONDUCTOR | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMP22D4UDA-7B | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 6-SMD, No Lead | 328mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | e3 | 活跃 | Matte Tin (Sn) | 未说明 | 未说明 | 310mW | 2 P-Channel (Dual) | 1.9 Ω @ 100mA, 4.5V | 1V @ 250μA | 28.5pF @ 15V | 0.4nC @ 4.5V | 20V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA2690T1R-E2-AX | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-PowerWDFN | 6 | 4A 3A | 150°C TJ | Tape & Reel (TR) | 2013 | e4 | 活跃 | 1 (Unlimited) | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.3W | 6 | Single | N and P-Channel Complementary | 42m Ω @ 2A, 4.5V | 330pF @ 10V | 4.5nC @ 10V | 20V | N-CHANNEL AND P-CHANNEL | 3A | 4A | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
NTJD4401NT4 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 88 | SILICON | 2 | 786 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | e0 | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin/Lead (Sn/Pb) | 8541.21.00.95 | 20V | 270mW | 鸥翼 | 235 | not_compliant | 775mA | 未说明 | NTJD4401N | 6 | R-PDSO-G6 | 不合格 | Dual | 增强型MOSFET | 270mW | 2 N-Channel (Dual) | SWITCHING | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 46pF @ 20V | 3nC @ 4.5V | 227ns | 227 ns | 630mA | 12V | 0.63A | 0.375Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 5 pF | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||
![]() | FMM300-0055P | IXYS | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 通孔 | i4-Pac™-5 | 5 | SILICON | 2 | -55°C~175°C TJ | Tube | 2004 | e3 | Obsolete | 1 (Unlimited) | 5 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | SINGLE | 260 | 35 | FMM | 5 | 不合格 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | 增强型MOSFET | ISOLATED | 2 N-Channel (Dual) | SWITCHING | 3.6m Ω @ 150A, 10V | 4V @ 2mA | 172nC @ 10V | 55V | 300A | 0.0036Ohm | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||
AO4616L_102 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 8A 7A | -55°C~150°C TJ | Bulk | 2011 | Obsolete | 1 (Unlimited) | 150°C | -55°C | 2W | 2W | N and P-Channel | 20mOhm @ 8A, 10V | 2.4V @ 250μA | 888pF @ 15V | 18nC @ 10V | 30V | 7A | 888pF | 逻辑电平门 | 20 mΩ | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4822L_101 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 8A | -55°C~150°C TJ | Bulk | 2011 | Obsolete | 1 (Unlimited) | 150°C | -55°C | 2W | 2W | 2 N-Channel (Dual) | 19mOhm @ 8A, 10V | 2.4V @ 250μA | 888pF @ 15V | 18nC @ 10V | 30V | 8A | 888pF | Standard | 19 mΩ | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AO8822#A | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 7A | -55°C~150°C TJ | Bulk | Obsolete | 1 (Unlimited) | 150°C | -55°C | 1.5W | 1.5W | 2 N-Channel (Dual) Common Drain | 18mOhm @ 7A, 10V | 1V @ 250μA | 780pF @ 10V | 18nC @ 10V | 20V | 7A | 780pF | 逻辑电平门 | 18 mΩ | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6314P | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | SC-88 (SC-70-6) | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 2 P-Channel (Dual) | 25V | Standard |
FDS3601
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
SH8KA7GZETB
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
APTMC120AM16CD3AG
Microsemi Corporation
分类:Transistors - FETs, MOSFETs - Arrays
IRF7314PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7389PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7101PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
PMDPB30XNZ
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
PHKD13N03LT,518
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
FMP36-015P
IXYS
分类:Transistors - FETs, MOSFETs - Arrays
AO6801E
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
CTLDM7120-M832DS TR
Central Semiconductor Corp
分类:Transistors - FETs, MOSFETs - Arrays
AOC2800
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
AON7902
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
SSM6L11TU(TE85L,F)
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
PMWD15UN,518
NXP USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
TPCL4201(TE85L,F)
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
64-2013PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
DMP22D4UDA-7B
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
UPA2690T1R-E2-AX
Renesas Electronics America
分类:Transistors - FETs, MOSFETs - Arrays
NTJD4401NT4
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FMM300-0055P
IXYS
分类:Transistors - FETs, MOSFETs - Arrays
AO4616L_102
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
AO4822L_101
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
AO8822#A
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
FDG6314P
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
